Weijin's paper on ferroelectric tunnel junction was just accepted by Nature Communications

Weijin's paper on ferroelectric tunnel junction was just accepted by Nature Communications

12/17/2015
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A ferroelectric tunnelling junction (FTJ) is composed of an ultrathin ferroelectric barrier sandwiched between two electrodes. A tunnelling electroresistance (TER) is realized through controlling the polarization state of the ultrathin ferroelectric barrier, which could be a promising candidate in the next-generation non-volatile memory technology. The demands for high-density, low-power data processing/storage devices require FTJs with large TER amplitude and integrated functionalities. Here by using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieved a TER of 105, which is record high for such FTJs. More importantly, the TER could be modulated by light illumination and is accompanied by a hysteretic photovoltaic effect. This provides a new route for producing and non-destructively sensing multiple non-volatile electronic states for state-of-the-art FTJs.