Complementary charge trapping and ionic migration in resistive switching of rare-earth manganite TbMnO3

Complementary charge trapping and ionic migration in resistive switching of rare-earth manganite TbMnO3

Complementary charge trapping and ionic migration in resistive switching of rare-earth manganite TbMnO3
Y. Cui,  H. Peng,  S. Wu,  R. Wang, T. Wu
ACS Applied Materials and Interfaces, Volume 5, Issue 4, Pages 1213-1217, (2013)

Y. Cui, H. Peng, S. Wu, R. Wang, T. Wu
Capacitance switching, Charge trapping, Ionic migration, Oxygen vacancies, Resistive switching, TbMnO3
2013


Perovskite rare-earth manganites like TbMnO3 exhibit rich magnetic and electric phases, providing opportunities for next-generation multifunctional devices. Here, we report the nonvolatile bipolar switching of resistance and capacitance in TbMnO3 thin films grown on conducting Nb:SrTiO3 substrates. The device shows an ON/OFF resistance ratio of ∼1 × 104, and the resistive switching is accompanied by a frequency-dependent capacitance switching. Detailed analysis of the conduction mechanisms reveals that the migration of oxygen vacancies and the charge trapping/detrapping at the heterojunction interface play important and complementary roles in the switching behaviors. Our results suggest that both electronic and ionic processes should be considered in order to elucidate the conduction mechanisms and the switching behaviors in such heterostructures made of complex oxides.



10.1021/am301769f

19448244