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Total result(s) found: 3
  • Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy​

    Riya Bose, Aniruddha Adhikari, Victor M. Burlakov, Guangyu Liu, Md Azimul Haque, Davide Priante, Mohamed N. Hedhili, Nimer Wehbe, Chao Zhao, Haoze Yang, Tien Khee Ng, Alain Goriely, Osman M. Bakr, Tom Wu, Boon S. Ooi, and Omar F. Mohammed* ​
    ACS Energy Lett., 2018, 3, 476, DOI: 10.1021/acsenergylett.7b01330​
Keywords:
silicon doped InGaN, nanowires, 4D electron microscopy, localized energy states
  • Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3​

    Chaojie Cui, Wei-Jin Hu, Xingxu Yan, Christopher Addiego, Wenpei Gao, Yao Wang, Zhe Wang, Linze Li, Yingchun Cheng, Peng Li, Xixiang Zhang, Husam N. Alshareef, Tom Wu, Wenguang Zhu, Xiaoqing Pan, and Lain-Jong Li ​
    Nano letters, 2018, DOI: 10.1021/acs.nanolett.7b04852​
Keywords:
ferroelectricity, two dimensional semiconductor, In2Se3
  • Fabry–Pérot Oscillation and Room Temperature Lasing in Perovskite Cube-Corner Pyramid Cavities​

    Yang Mi, Zhixiong Liu, Qiuyu Shang, Xinxiang Niu, Jia Shi, Shuai Zhang, Jie Chen, Wenna Du, Zhiyong Wu, Rui Wang, Xiaohui Qiu, Xiaoyong Hu, Qing Zhang, Tom Wu, Xinfeng Liu​.
    Small, 2018, DOI: 10.1002/smll.201703136​
Keywords:
Fabry-Perot oscillation, perovskite, lasing, pyramid cavities